Invention Grant
US08436600B2 Apparatus for detecting a state of operation of a power semiconductor device
有权
用于检测功率半导体器件的操作状态的装置
- Patent Title: Apparatus for detecting a state of operation of a power semiconductor device
- Patent Title (中): 用于检测功率半导体器件的操作状态的装置
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Application No.: US13088200Application Date: 2011-04-15
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Publication No.: US08436600B2Publication Date: 2013-05-07
- Inventor: Georg Pelz , Michael Lenz , Matthias Kunze
- Applicant: Georg Pelz , Michael Lenz , Matthias Kunze
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G05F1/40
- IPC: G05F1/40

Abstract:
An embodiment of the invention relates to an apparatus including a power semiconductor device and a processor coupled thereto. The processor is configured to provide a control signal to the power semiconductor device to regulate an output characteristic of the apparatus. The processor models an internal characteristic of the power semiconductor device and alters the control signal if the modeled internal characteristic crosses a threshold value. In an exemplary embodiment, the internal characteristic is a channel temperature of a MOSFET. A sensor such as a thermistor is coupled to or included within the processor to sense a parameter separate from the power semiconductor device, such as a processor temperature, and the processor is configured to adapt the modeled internal characteristic to the sensed parameter.
Public/Granted literature
- US20110210711A1 Apparatus for Detecting a State of Operation of a Power Semiconductor Device Public/Granted day:2011-09-01
Information query
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