Invention Grant
- Patent Title: Circuits and methods for testing through-silicon vias
- Patent Title (中): 用于测试硅通孔的电路和方法
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Application No.: US13053333Application Date: 2011-03-22
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Publication No.: US08436639B2Publication Date: 2013-05-07
- Inventor: Sandeep Kumar Goel
- Applicant: Sandeep Kumar Goel
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H03K19/003
- IPC: H03K19/003 ; H03K19/173 ; G01R31/02

Abstract:
A multiple level integrated circuit uses an array of oppositely oriented individually enabled buffers between through-silicon vias (TSVs) and a clocked flip-flop, for each of multiple signal lines that include TSVs. Applying and/or reading logic levels to and from the TSVs and associated flip-flops produces values that a logic element compares to expected values characterizing nominal operation or detects open and short circuit defects. A process associated with testing the TSVs during assembly comprises testing for short circuits and then exposing and connecting the TSVs via a conductive layer to check for open circuits.
Public/Granted literature
- US20120242367A1 CIRCUITS AND METHODS FOR TESTING THROUGH-SILICON VIAS Public/Granted day:2012-09-27
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