Invention Grant
- Patent Title: High frequency solid state switching for impedance matching
- Patent Title (中): 用于阻抗匹配的高频固态开关
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Application No.: US13288712Application Date: 2011-11-03
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Publication No.: US08436643B2Publication Date: 2013-05-07
- Inventor: Christopher C. Mason
- Applicant: Christopher C. Mason
- Applicant Address: US CO Fort Collins
- Assignee: Advanced Energy Industries, Inc.
- Current Assignee: Advanced Energy Industries, Inc.
- Current Assignee Address: US CO Fort Collins
- Agency: Neugeboren O'Dowd PC
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003

Abstract:
In accordance with this invention the above and other problems are solved by a switching apparatus and method that uses a switching circuit having a pair of parallel solid-state diodes (e.g., PN diodes), one of which is connected to a transistor (e.g., power MOSFET or IGBT), to switch a capacitor in or out of a variable capacitance element of an impedance matching network. Charging a body capacitance of the transistor reverse biases one of the two diodes so as to isolate the transistor from the RF signal enabling a low-cost high capacitance transistor to be used. Multiple such switching circuits and capacitors are connected in parallel to provide variable impedance for the purpose of impedance matching.
Public/Granted literature
- US20120112815A1 HIGH FREQUENCY SOLID STATE SWITCHING FOR IMPEDANCE MATCHING Public/Granted day:2012-05-10
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