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US08436643B2 High frequency solid state switching for impedance matching 有权
用于阻抗匹配的高频固态开关

High frequency solid state switching for impedance matching
Abstract:
In accordance with this invention the above and other problems are solved by a switching apparatus and method that uses a switching circuit having a pair of parallel solid-state diodes (e.g., PN diodes), one of which is connected to a transistor (e.g., power MOSFET or IGBT), to switch a capacitor in or out of a variable capacitance element of an impedance matching network. Charging a body capacitance of the transistor reverse biases one of the two diodes so as to isolate the transistor from the RF signal enabling a low-cost high capacitance transistor to be used. Multiple such switching circuits and capacitors are connected in parallel to provide variable impedance for the purpose of impedance matching.
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