Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13479537Application Date: 2012-05-24
-
Publication No.: US08436965B2Publication Date: 2013-05-07
- Inventor: Tetsuji Ishitani , Daisuke Kubota , Takeshi Nishi
- Applicant: Tetsuji Ishitani , Daisuke Kubota , Takeshi Nishi
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2006-154801 20060602
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; G02F1/1343

Abstract:
External light is reflected due to a difference in refractive indices of a black matrix and a glass substrate. When the black matrix is a black resin, there is a difference in refractive indices of the black resin and a first substrate. Also, there is a difference in refractive indices of the colored layer and the first substrate. Therefore, external light is slightly reflected. There is a problem in that the reflected light reduces contrast. A structure in which one polarizing element having dichroism is interposed between a pair of substrates is employed, and a light interference layer is provided between a color filter and a glass substrate, whereby a difference in refractive indices is moderated to reduce light reflection.
Public/Granted literature
- US20120228661A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-09-13
Information query
IPC分类: