Invention Grant
- Patent Title: Method for forming a nanostructure penetrating a layer
- Patent Title (中): 形成穿透层的纳米结构的方法
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Application No.: US13157154Application Date: 2011-06-09
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Publication No.: US08437001B2Publication Date: 2013-05-07
- Inventor: Kai Cheng , Pol Van Dorpe , Liesbet Lagae , Gustaaf Borghs , Chang Chen
- Applicant: Kai Cheng , Pol Van Dorpe , Liesbet Lagae , Gustaaf Borghs , Chang Chen
- Applicant Address: BE Leuven BE Leuven
- Assignee: IMEC,Katholieke Universiteit Leuven
- Current Assignee: IMEC,Katholieke Universiteit Leuven
- Current Assignee Address: BE Leuven BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: EP08171127 20081209
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A method for forming a nanostructure penetrating a layer and the device made thereof is disclosed. In one aspect, the device has a substrate, a layer present thereon, and a nanostructure penetrating the layer. The nanostructure defines a nanoscale passageway through which a molecule to be analyzed can pass through. The nanostructure has, in cross-sectional view, a substantially triangular shape. This shape is particularly achieved by growth of an epitaxial layer having crystal facets defining tilted sidewalls of the nanostructure. It is highly suitably for use for optical characterization of molecular structure, particularly with surface plasmon enhanced transmission spectroscopy.
Public/Granted literature
- US20120057163A1 METHOD FOR FORMING A NANOSTRUCTURE PENETRATING A LAYER Public/Granted day:2012-03-08
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