Invention Grant
US08437174B2 Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
有权
存储器件器件，场效应晶体管器件，非易失性存储器阵列和编程方法
- Patent Title: Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
- Patent Title (中): 存储器件器件，场效应晶体管器件，非易失性存储器阵列和编程方法
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Application No.: US12705928Application Date: 2010-02-15
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Publication No.: US08437174B2Publication Date: 2013-05-07
- Inventor: Roy E. Meade , Gurtej S. Sandhu
- Applicant: Roy E. Meade , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: G11C11/24
- IPC: G11C11/24
Abstract:
A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods.
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