Invention Grant
- Patent Title: Non-volatile memory with both single and multiple level cells
- Patent Title (中): 具有单级和多级单元的非易失性存储器
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Application No.: US13494525Application Date: 2012-06-12
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Publication No.: US08437186B2Publication Date: 2013-05-07
- Inventor: Seiichi Aritome
- Applicant: Seiichi Aritome
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Memory arrays and methods of operating such memory arrays are described as having a memory cell operated as a single level cell interposed between and coupled to a select gate and a memory cell operated as a multiple level memory cell. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of memory cells operated as single level memory cells and a number of memory cells operated as multiple level memory cells, where a first select gate is directly coupled to a first memory cell operated as a single level memory cell interposed between and coupled to the first select gate and a continuous number of memory cells operated as multiple level memory cells.
Public/Granted literature
- US20120257451A1 NON-VOLATILE MEMORY WITH BOTH SINGLE AND MULTIPLE LEVEL CELLS Public/Granted day:2012-10-11
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