Invention Grant
- Patent Title: Flash memory device and operating method thereof
- Patent Title (中): 闪存设备及其操作方法
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Application No.: US12914091Application Date: 2010-10-28
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Publication No.: US08437191B2Publication Date: 2013-05-07
- Inventor: Jung-Hwan Lee , Seong-Je Park
- Applicant: Jung-Hwan Lee , Seong-Je Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0083971 20100830
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A flash memory device includes a memory cell string including a plurality of memory cells serially coupled to one another between a bit line and a source line, a page buffer configured to perform a precharging operation and a sensing operation with respect to the bit line, and a power supply unit configured to supply a certain supply voltage through the source line before the precharging operation.
Public/Granted literature
- US20120051135A1 FLASH MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2012-03-01
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