Invention Grant
US08437196B2 Sense-amplifier circuit for non-volatile memories that operates at low supply voltages 有权
用于在低电源电压下工作的非易失性存储器的感应放大器电路

Sense-amplifier circuit for non-volatile memories that operates at low supply voltages
Abstract:
A sense-amplifier circuit includes: a comparison stage that compares a cell current that flows in a memory cell and through an associated bitline, with a reference current, for supplying an output signal indicating the state of the memory cell; and a precharging stage, which supplies, during a precharging step prior to the comparison step, a precharging current to the bitline so as to charge a capacitance thereof. The comparison stage includes a first comparison transistor and by a second comparison transistor, which are coupled in current-mirror configuration respectively to a first differential output and to a second differential output, through which a biasing current flows. The precharging stage diverts, during the precharging step, the biasing current towards the bitline as precharging current, and allows, during the comparison step, passage of part of the biasing current towards the first differential output, enabling operation of the current mirror.
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