According to one embodiment, a nonvolatile semiconductor memory includes memory cells arranged in a memory cell array in the form of a matrix, the memory cell storing data having two or more levels associated with two or more threshold levels, respectively, a buffer circuit including latch circuits and sense amplifier circuits, each latch circuit and each sense amplifier being associated with each column in the memory cell array, and a control circuit configured to control operations of the memory cells and the buffer circuit, the control circuit executing data writing with respect to the memory cells and first verification using judgment information indicative of a result of the data writing in a write sequence with respect to data from the outside. The judgment information is assigned to two or more threshold levels, which are not adjacent to each other, in common.