Invention Grant
- Patent Title: Method for discharging a voltage from a capacitance in a memory device
- Patent Title (中): 用于从存储器件中的电容放电的方法
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Application No.: US13595002Application Date: 2012-08-27
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Publication No.: US08437198B2Publication Date: 2013-05-07
- Inventor: Agostino Macerola
- Applicant: Agostino Macerola
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
In discharging a voltage from a circuit capacitance, a supply voltage to a memory device is monitored. The capacitance is discharged through a discharge circuit from a relatively high voltage to a relatively low voltage when the supply voltage decreases below a trip voltage. The trip voltage is set by an architecture of the discharge circuit.
Public/Granted literature
- US20120320684A1 METHOD FOR DISCHARGING A VOLTAGE FROM A CAPACITANCE IN A MEMORY DEVICE Public/Granted day:2012-12-20
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