Invention Grant
- Patent Title: Asymmetric sense amplifier design
- Patent Title (中): 非对称放大器设计
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Application No.: US13030722Application Date: 2011-02-18
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Publication No.: US08437210B2Publication Date: 2013-05-07
- Inventor: Ching-Wei Wu , Kuang Ting Chen , Cheng Hung Lee
- Applicant: Ching-Wei Wu , Kuang Ting Chen , Cheng Hung Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A circuit includes a first inverter including a first PMOS transistor and a first NMOS transistor, and a second inverter including a second PMOS transistor and a second NMOS transistor. A first node is connected to gates of the first PMOS transistor and the first NMOS transistor and drains of the second PMOS transistor and the second NMOS transistor. A second node is connected to gates of the second PMOS transistor and the second NMOS transistor and drains of the first PMOS transistor and the first NMOS transistor. The circuit further includes a first capacitor having a first capacitance connected to the first node; and a second capacitor having a second capacitance connected to the second node. The second capacitance is greater than the first capacitance.
Public/Granted literature
- US20120213010A1 Asymmetric Sense Amplifier Design Public/Granted day:2012-08-23
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