A semiconductor laser element may include an n-type clad layer; an n-type waveguide layer adjacent to the n-type clad layer; an n-type carrier blocking layer adjacent to the n-type waveguide layer; an active layer; and a p-type clad layer adjacent to the active layer. The n-type clad layer may have a bandgap width greater than a bandgap width of the n-type waveguide layer. The n-type carrier blocking layer may have a bandgap width greater than or equal to bandgap widths of the first and second barrier layers. The p-type clad layer may have a bandgap width greater than the bandgap widths of the first and second barrier layers and the bandgap width of the n-type waveguide layer. The active layer may include a quantum well layer and barrier layers.