Invention Grant
US08438509B2 Automated generation of oxide pillar slot shapes in silicon-on-insulator formation technology 有权
在硅绝缘体形成技术中自动生成氧化物柱槽形状

Automated generation of oxide pillar slot shapes in silicon-on-insulator formation technology
Abstract:
A method of automated generation of oxide pillar (PX) slot shapes of a PX layer within silicon-on-insulator (SOI) structures that includes generating a placement grid on recess oxide (RX) shapes, creating PX placement markers on the placement grid along a perimeter of the RX shapes, filtering the PX placement markers, generating a PX slot shape corresponding to each filtered PX placement marker on the RX shapes, correcting location errors associated with the generated PX slot shapes, generating PX slot shapes on RX shapes of a predetermined size for which PX slot shapes were not generated, performing a verification operation of the PX slot shapes, and outputting the PX layer including the verified PX slot shapes.
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