Invention Grant
US08440376B2 Exposure determining method, method of manufacturing semiconductor device, and computer program product 有权
曝光确定方法,制造半导体器件的方法和计算机程序产品

Exposure determining method, method of manufacturing semiconductor device, and computer program product
Abstract:
According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
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