Invention Grant
- Patent Title: Low-cost non-volatile flash-RAM memory
- Patent Title (中): 低成本的非易失性闪存 - RAM内存
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Application No.: US13345608Application Date: 2012-01-06
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Publication No.: US08440471B2Publication Date: 2013-05-14
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod , Mahmud Assar
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod , Mahmud Assar
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/82 ; G01C11/02
Abstract:
A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.
Public/Granted literature
- US20120107964A1 LOW-COST NON-VOLATILE FLASH-RAM MEMORY Public/Granted day:2012-05-03
Information query
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