Invention Grant
- Patent Title: Method for producing a semiconductor device by etch back process
- Patent Title (中): 通过回蚀法制造半导体器件的方法
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Application No.: US11713619Application Date: 2007-03-05
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Publication No.: US08440509B2Publication Date: 2013-05-14
- Inventor: Hisashi Ohtani , Misako Nakazawa , Satoshi Murakami
- Applicant: Hisashi Ohtani , Misako Nakazawa , Satoshi Murakami
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP9-344350 19971127; JP10-18050 19980114
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each other with an embedded conductive layer or an oxide conductive layer provided as filling an opening formed in the insulating layer, and the embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.
Public/Granted literature
- US20070161236A1 Semiconductor device and process for producing the same Public/Granted day:2007-07-12
Information query
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