Invention Grant
US08440531B2 Methods of forming semiconductor memory devices having vertically stacked memory cells therein
有权
形成其中具有垂直堆叠的存储单元的半导体存储器件的方法
- Patent Title: Methods of forming semiconductor memory devices having vertically stacked memory cells therein
- Patent Title (中): 形成其中具有垂直堆叠的存储单元的半导体存储器件的方法
-
Application No.: US13448582Application Date: 2012-04-17
-
Publication No.: US08440531B2Publication Date: 2013-05-14
- Inventor: Tae-Jong Han , Daewoong Kim , Kyung-Tae Jang , Bongcheol Kim , Ohchel Kwon
- Applicant: Tae-Jong Han , Daewoong Kim , Kyung-Tae Jang , Bongcheol Kim , Ohchel Kwon
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2011-0041112 20110429
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Methods of forming vertical nonvolatile memory devices utilize carbon-blocking sacrificial capping layers to increase device yield by reducing the likelihood that one or more vertically-stacked layers of materials will lift-off during fabrication. These capping layers may be provided to cover carbon-containing sacrificial layers that are highly polymerized.
Public/Granted literature
- US20120276719A1 METHODS OF FORMING SEMICONDUCTOR MEMORY DEVICES HAVING VERTICALLY STACKED MEMORY CELLS THEREIN Public/Granted day:2012-11-01
Information query
IPC分类:
