Invention Grant
- Patent Title: Forming a phase change memory with an ovonic threshold switch
- Patent Title (中): 形成一个带有超声门限开关的相变存储器
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Application No.: US13463072Application Date: 2012-05-03
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Publication No.: US08440535B2Publication Date: 2013-05-14
- Inventor: Charles H. Dennison
- Applicant: Charles H. Dennison
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/00 ; H01L21/06
Abstract:
A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.
Public/Granted literature
- US20120220099A1 Forming a Phase Change Memory With an Ovonic Threshold Switch Public/Granted day:2012-08-30
Information query
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