Invention Grant
- Patent Title: Semiconductor device and structure
- Patent Title (中): 半导体器件及结构
-
Application No.: US13218815Application Date: 2011-08-26
-
Publication No.: US08440542B2Publication Date: 2013-05-14
- Inventor: Deepak C. Sekar , Zvi Or-Bach
- Applicant: Deepak C. Sekar , Zvi Or-Bach
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Tran & Associates
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate; preparing a first monocrystalline layer comprising semiconductor regions; preparing a second monocrystalline layer comprising semiconductor regions overlying the first monocrystalline layer; and etching portions of said first monocrystalline layer and portions of said second monocrystalline layer as part of forming at least one transistor on said first monocrystalline layer.
Public/Granted literature
- US20120088367A1 SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2012-04-12
Information query
IPC分类: