Invention Grant
- Patent Title: CMOS structure and method of manufacture
- Patent Title (中): CMOS结构及制造方法
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Application No.: US12899127Application Date: 2010-10-06
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Publication No.: US08440544B2Publication Date: 2013-05-14
- Inventor: Paul S. Andry , Edmund J. Sprogis , Cornelia K. Tsang
- Applicant: Paul S. Andry , Edmund J. Sprogis , Cornelia K. Tsang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L21/301
- IPC: H01L21/301
Abstract:
CMOS structures with a replacement substrate and methods of manufacture are disclosed herein. The method includes forming a device on a temporary substrate. The method further includes removing the temporary substrate. The method further includes bonding a permanent electrically insulative substrate to the device with a bonding structure.
Public/Granted literature
- US20120086100A1 CMOS STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2012-04-12
Information query
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