Invention Grant
- Patent Title: Method for fabricating a semiconductor device by considering the extinction coefficient during etching of an interlayer insulating film
- Patent Title (中): 考虑蚀刻层间绝缘膜时的消光系数来制造半导体器件的方法
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Application No.: US12840063Application Date: 2010-07-20
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Publication No.: US08440557B2Publication Date: 2013-05-14
- Inventor: Seiji Yokoyama , Yuuichirou Sekimoto , Sinichi Imada
- Applicant: Seiji Yokoyama , Yuuichirou Sekimoto , Sinichi Imada
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2007-270744 20071017
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
The present invention is directed to a method for manufacturing a semiconductor device by forming an ultraviolet radiation absorbing film of a silicon-rich film above a semiconductor substrate, measuring an extinction coefficient of the ultraviolet radiation absorbing film of a silicon-rich film for ultraviolet radiation, and etching the ultraviolet radiation absorbing film of a silicon-rich film under an etching condition using an oxygen gas flow rate corresponding to the extinction coefficient.
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