Si etching method

Invention Grant

Title translation: Si蚀刻法

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Patent Title: Si etching method
Patent Title (中): Si蚀刻法
Application No.: US12576536

Application Date: 2009-10-09
Publication No.: US08440572B2

Publication Date: 2013-05-14
Inventor: Masanobu Honda
Applicant: Masanobu Honda
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
Priority: JP2008-266231 20081015
Main IPC: H01L21/306
IPC: H01L21/306

Abstract:

A Si etching method includes: arranging a silicon substrate or a substrate having a silicon layer in a processing chamber; generating a plasma of an etching gas in the processing chamber; and etching the silicon substrate by the plasma. The etching gas is a gaseous mixture including a Br2 gas and one of a Cl2 gas and a chloride gas. The chloride gas has a mass that is higher than that of the Cl2 gas.

Abstract(Chinese):

Si蚀刻方法包括：在处理室中布置硅衬底或具有硅层的衬底; 在所述处理室中产生蚀刻气体的等离子体; 并通过等离子体蚀刻硅衬底。蚀刻气体是包含Br 2气体和Cl 2气体和氯化物气体之一的气体混合物。氯化物气体的质量高于Cl2气体。

Public/Granted literature

US20100093178A1 Si ETCHING METHOD Public/Granted day:2010-04-15

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）