Invention Grant
- Patent Title: Nitride semiconductor light emitting device and fabrication method thereof
- Patent Title (中): 氮化物半导体发光器件及其制造方法
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Application No.: US13358034Application Date: 2012-01-25
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Publication No.: US08440996B2Publication Date: 2013-05-14
- Inventor: Sang Won Kang , Yong Chun Kim , Dong Hyun Cho , Jeong Tak Oh , Dong Joon Kim
- Applicant: Sang Won Kang , Yong Chun Kim , Dong Hyun Cho , Jeong Tak Oh , Dong Joon Kim
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2007-0070107 20070712
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
Public/Granted literature
- US20120119187A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2012-05-17
Information query
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