Invention Grant
US08441012B2 Array substrate, method for manufacturing array substrate, and display device 有权
阵列基板,阵列基板的制造方法以及显示装置

  • Patent Title: Array substrate, method for manufacturing array substrate, and display device
  • Patent Title (中): 阵列基板,阵列基板的制造方法以及显示装置
  • Application No.: US13388435
    Application Date: 2010-06-08
  • Publication No.: US08441012B2
    Publication Date: 2013-05-14
  • Inventor: Makoto Juhmonji
  • Applicant: Makoto Juhmonji
  • Applicant Address: JP Osaka
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka
  • Agency: Chen Yoshimura LLP
  • Priority: JP2009-190990 20090820
  • International Application: PCT/JP2010/059648 WO 20100608
  • International Announcement: WO2011/021425 WO 20110224
  • Main IPC: H01L29/417
  • IPC: H01L29/417 H01L29/786 H01L21/336
Array substrate, method for manufacturing array substrate, and display device
Abstract:
The present invention provides an array substrate, a method for manufacturing an array substrate, and a display device which are such that reflow failure of a resist mask does not occur readily at the time of manufacture of the array substrate, so the array substrate can be manufactured reliably. At the time of forming a TFT, third wiring 37 between source wiring 13 and the source electrode 22 of the TFT is provided with a narrow portion 38 that is formed with a narrow width by narrowing a midpoint at a portion of the wiring in planar shape, and the resist film on the source electrode 22 and a drain electrode 23 is reflowed so as to cover the surface of a channel region Q, thus forming a reflowed resist film 42. A semiconductor film 20 is etched using this as the etching mask in a state in which the area between the source and the drain is protected, thus making the semiconductor film 20 into an island shape.
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