Light emitting device

Invention Grant

US08441025B2 Light emitting device 有权

Title translation: 发光装置

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Patent Title: Light emitting device
Patent Title (中): 发光装置
Application No.: US12573422

Application Date: 2009-10-05
Publication No.: US08441025B2

Publication Date: 2013-05-14
Inventor: Sun Kyung Kim
Applicant: Sun Kyung Kim
Applicant Address: KR Seoul
Assignee: LG Innotek Co., Ltd.
Current Assignee: LG Innotek Co., Ltd.
Current Assignee Address: KR Seoul
Agency: KED & Associates, LLP
Priority: KR10-2009-0017787 20090302
Main IPC: H01L29/72
IPC: H01L29/72

Abstract:

A light emitting device is provided. The light emitting device may include a reflective layer having a prescribed pattern of at least one shape having prescribed thickness, width and periodicity. The light emitting device may also include a light emitting layer formed on the reflective layer. The prescribed periodicity may be based on 0.75λ/n to 5λ/n, where λ is the wavelength of the light emitted from the light emitting layer, and n is the refractive index of the light emitting layer.

Abstract(Chinese):

提供了一种发光器件。发光装置可以包括具有预定厚度，宽度和周期的至少一种形状的规定图案的反射层。发光器件还可以包括形成在反射层上的发光层。规定的周期可以基于0.75λ/ n至5λ/ n，其中λ是从发光层发射的光的波长，n是发光层的折射率。

Public/Granted literature

US20100219434A1 LIGHT EMITTING DEVICE Public/Granted day:2010-09-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的