Invention Grant
- Patent Title: Low-level signal detection by semiconductor avalanche amplification
- Patent Title (中): 半导体雪崩放大的低电平信号检测
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Application No.: US12825255Application Date: 2010-06-28
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Publication No.: US08441032B2Publication Date: 2013-05-14
- Inventor: Krishna Linga
- Applicant: Krishna Linga
- Applicant Address: US NY Brooklyn
- Assignee: Amplification Technologies, Inc.
- Current Assignee: Amplification Technologies, Inc.
- Current Assignee Address: US NY Brooklyn
- Agency: Frommer Lawrence & Haug LLP
- Main IPC: H01L31/107
- IPC: H01L31/107
Abstract:
A system and method providing for the detection of an input signal, either optical or electrical, by using a single independent discrete amplifier or by distributing the input signal into independent signal components that are independently amplified. The input signal can either be the result of photoabsorption process in the wavelengths greater than 950 nm or a low-level electrical signal. The discrete amplifier is an avalanche amplifier operable in a non-gated mode while biased in or above the breakdown region, and includes a composite dielectric feedback layer monolithically integrated with input signal detection and amplification semiconductor layers.
Public/Granted literature
- US20110018086A1 LOW-LEVEL SIGNAL DETECTION BY SEMICONDUCTOR AVALANCHE AMPLIFICATION Public/Granted day:2011-01-27
Information query
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