Invention Grant
- Patent Title: Methods for manufacturing low noise chemically-sensitive field effect transistors
- Patent Title (中): 制造低噪声化学敏感场效应晶体管的方法
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Application No.: US13554816Application Date: 2012-07-20
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Publication No.: US08441044B2Publication Date: 2013-05-14
- Inventor: Jonathan Rothberg , Wolfgang Hinz , Kim Johnson , James Bustillo
- Applicant: Jonathan Rothberg , Wolfgang Hinz , Kim Johnson , James Bustillo
- Applicant Address: US CA Carlsbad
- Assignee: Life Technologies Corporation
- Current Assignee: Life Technologies Corporation
- Current Assignee Address: US CA Carlsbad
- Main IPC: G01N27/403
- IPC: G01N27/403

Abstract:
Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
Public/Granted literature
- US20120288976A1 METHODS FOR MANUFACTURING LOW NOISE CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTORS Public/Granted day:2012-11-15
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