Invention Grant
- Patent Title: Horizontally depleted metal semiconductor field effect transistor
- Patent Title (中): 水平耗尽的金属半导体场效应晶体管
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Application No.: US12677066Application Date: 2008-09-12
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Publication No.: US08441048B2Publication Date: 2013-05-14
- Inventor: Joseph E. Ervin , Trevor John Thornton
- Applicant: Joseph E. Ervin , Trevor John Thornton
- Applicant Address: US AZ Scottsdale
- Assignee: Arizona Board of Regents for and on behalf of Arizona State University
- Current Assignee: Arizona Board of Regents for and on behalf of Arizona State University
- Current Assignee Address: US AZ Scottsdale
- Agency: Withrow & Terranova, P.L.L.C.
- International Application: PCT/US2008/076169 WO 20080912
- International Announcement: WO2009/036273 WO 20090319
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66

Abstract:
The present invention provides a horizontally depleted Metal Semiconductor Field Effect Transistor (MESFET). A drain region, a source region, and a channel region are formed in the device layer such that the drain region and the source region are spaced apart from one another and the channel region extends between the drain region and the source region. First and second gate contacts are formed in the device layer on either side of the channel region, and as such, the first and second gate contacts will also reside between opposing portions of the source and drain regions. With this configuration, voltages applied to the first and second gate contacts effectively control vertical depletion regions, which form on either side of the channel region.
Public/Granted literature
- US20100320508A1 HORIZONTALLY DEPLETED METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR Public/Granted day:2010-12-23
Information query
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