Invention Grant
US08441055B2 Methods for forming strained channel dynamic random access memory devices
有权
形成应变通道动态随机存取存储器件的方法
- Patent Title: Methods for forming strained channel dynamic random access memory devices
- Patent Title (中): 形成应变通道动态随机存取存储器件的方法
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Application No.: US13568894Application Date: 2012-08-07
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Publication No.: US08441055B2Publication Date: 2013-05-14
- Inventor: Mayank T. Bulsara , Matthew T. Currie , Anthony J. Lochtefeld
- Applicant: Mayank T. Bulsara , Matthew T. Currie , Anthony J. Lochtefeld
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
Public/Granted literature
- US20120302032A1 Methods for Forming Strained Channel Dynamic Random Access Memory Devices Public/Granted day:2012-11-29
Information query
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