Invention Grant
US08441060B2 Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element
有权
非易失性存储器元件和非易失性存储器件结合非易失性存储元件
- Patent Title: Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element
- Patent Title (中): 非易失性存储器元件和非易失性存储器件结合非易失性存储元件
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Application No.: US12745599Application Date: 2009-09-29
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Publication No.: US08441060B2Publication Date: 2013-05-14
- Inventor: Takeki Ninomiya , Koji Arita , Takumi Mikawa , Satoru Fujii
- Applicant: Takeki Ninomiya , Koji Arita , Takumi Mikawa , Satoru Fujii
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-256027 20081001
- International Application: PCT/JP2009/004976 WO 20090929
- International Announcement: WO2010/038423 WO 20100408
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A nonvolatile memory element includes a first electrode (103) formed on a substrate (101), a resistance variable layer (108) and a second electrode (107), wherein the resistance variable layer has a multi-layer structure including at least three layers which are a first transition metal oxide layer (104), a second transition metal oxide layer (106) which is higher in oxygen concentration than the first transition metal oxide layer (104), and a transition metal oxynitride layer (105). The second transition metal oxide layer (106) is in contact with either one of the first electrode (103) and the second electrode (107). The transition metal oxynitride layer (105) is provided between the first transition metal oxide layer (104) and the second transition metal oxide layer (106).
Public/Granted literature
- US20100308298A1 NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT Public/Granted day:2010-12-09
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