Invention Grant
US08441064B2 Scalable interpoly dielectric stacks with improved immunity to program saturation
有权
可扩展的互补电介质堆叠，具有提高的编程饱和度的免疫力
- Patent Title: Scalable interpoly dielectric stacks with improved immunity to program saturation
- Patent Title (中): 可扩展的互补电介质堆叠，具有提高的编程饱和度的免疫力
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Application No.: US13207961Application Date: 2011-08-11
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Publication No.: US08441064B2Publication Date: 2013-05-14
- Inventor: Bogdan Govoreanu , Stefan De Gendt , Sven Van Elshocht , Tom Schram
- Applicant: Bogdan Govoreanu , Stefan De Gendt , Sven Van Elshocht , Tom Schram
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP08153100 20080320
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A method for manufacturing a non-volatile memory device is described. The method comprises growing a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored. A non-volatile memory device is also described. In the non-volatile memory device, the interpoly/blocking dielectric comprises a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored, the siliconoxide consuming material having consumed at least part of the upper layer.
Public/Granted literature
- US20110291179A1 Scalable Interpoly Dielectric Stacks With Improved Immunity to Program Saturation Public/Granted day:2011-12-01
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