A body contacted semiconductor-on-insulator (SOI) metal gate containing transistor that has a reduced parasitic gate capacitance is provided in which a metal portion of a gate stack is removed over the body contact region and a silicon-containing material is formed that contacts the gate dielectric in the body contact region of an SOI substrate. This causes an increase of the effective gate dielectric thickness on the body contact region by greater than 5 angstroms (Å). This results in a lower parasitic capacitance at the body contact region.