Invention Grant
US08441075B2 Power semiconductor apparatus having a silicon power semiconductor device and a wide gap semiconductor device
有权
具有硅功率半导体器件和宽间隙半导体器件的功率半导体器件
- Patent Title: Power semiconductor apparatus having a silicon power semiconductor device and a wide gap semiconductor device
- Patent Title (中): 具有硅功率半导体器件和宽间隙半导体器件的功率半导体器件
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Application No.: US12707909Application Date: 2010-02-18
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Publication No.: US08441075B2Publication Date: 2013-05-14
- Inventor: Katsumi Ishikawa , Kazutoshi Ogawa
- Applicant: Katsumi Ishikawa , Kazutoshi Ogawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-080850 20090330
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted.
Public/Granted literature
- US20100244092A1 POWER SEMICONDUCTOR APPARATUS Public/Granted day:2010-09-30
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