Invention Grant
- Patent Title: Memory element and memory
- Patent Title (中): 内存元素和内存
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Application No.: US13225775Application Date: 2011-09-06
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Publication No.: US08441082B2Publication Date: 2013-05-14
- Inventor: Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
- Applicant: Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2010-204835 20100913
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
There is provided a memory element including a magnetic layer that includes FexNiyBz (here, x+y+z=1, 0.2x≦y≦4x, and 0.1(x+y)≦z≦0.4(x+y)) as a main component, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and comes into contact with one face of the magnetic layer.
Public/Granted literature
- US20120061781A1 MEMORY ELEMENT AND MEMORY Public/Granted day:2012-03-15
Information query
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