Invention Grant
US08441095B2 Semiconductor device having a ring oscillator and MISFET for converting voltage fluctuation to frequency fluctuation
有权
具有用于将电压波动转换为频率波动的环形振荡器和MISFET的半导体器件
- Patent Title: Semiconductor device having a ring oscillator and MISFET for converting voltage fluctuation to frequency fluctuation
- Patent Title (中): 具有用于将电压波动转换为频率波动的环形振荡器和MISFET的半导体器件
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Application No.: US13438347Application Date: 2012-04-03
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Publication No.: US08441095B2Publication Date: 2013-05-14
- Inventor: Yusuke Kanno , Hiroyuki Mizuno , Yoshihiko Yasu , Kenji Hirose , Takahiro Irita
- Applicant: Yusuke Kanno , Hiroyuki Mizuno , Yoshihiko Yasu , Kenji Hirose , Takahiro Irita
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2005-166714 20050607
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/70 ; H01L25/00

Abstract:
A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semiconductor integrated circuit device, power shutdown priorities are provided by independent power domains (Area A to Area I). A method for preventing a power domain having a lower priority from being turned OFF when a circuit having a high priority is turned ON is also provided.
Public/Granted literature
- US20120187981A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2012-07-26
Information query
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