Invention Grant
- Patent Title: Fuse of semiconductor device and method for forming the same
- Patent Title (中): 半导体器件的保险丝及其形成方法
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Application No.: US12834001Application Date: 2010-07-11
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Publication No.: US08441096B2Publication Date: 2013-05-14
- Inventor: Dong Hee Han
- Applicant: Dong Hee Han
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2009-0085375 20090910
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/768

Abstract:
A fuse of a semiconductor device comprises: a fuse pattern formed on a semiconductor substrate; an insulating film covering one side of the fuse pattern and including a trench; a conductive line disposed on the insulating film including the trench. The fuse of the semiconductor device prevents generation of cracks in a fuse box by thermal and physical stress, thereby improving reliability of the semiconductor device.
Public/Granted literature
- US20110057290A1 FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2011-03-10
Information query
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