- Patent Title: Electrical overstress protection using through-silicon-via (TSV)
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Application No.: US13297571Application Date: 2011-11-16
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Publication No.: US08441104B1Publication Date: 2013-05-14
- Inventor: Lejun Hu , Srivatsan Parthasarathy , Michael Coln , Javier Salcedo
- Applicant: Lejun Hu , Srivatsan Parthasarathy , Michael Coln , Javier Salcedo
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Kenyon & Kenyon LLP
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.
Public/Granted literature
- US20130119502A1 ELECTRICAL OVERSTRESS PROTECTION USING THROUGH-SILICON-VIA (TSV) Public/Granted day:2013-05-16
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