Invention Grant
US08441108B2 Nitride semiconductor element having electrode on m-plane and method for producing the same
有权
在m面上具有电极的氮化物半导体元件及其制造方法
- Patent Title: Nitride semiconductor element having electrode on m-plane and method for producing the same
- Patent Title (中): 在m面上具有电极的氮化物半导体元件及其制造方法
-
Application No.: US12993305Application Date: 2010-03-16
-
Publication No.: US08441108B2Publication Date: 2013-05-14
- Inventor: Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
- Applicant: Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2009-090064 20090402
- International Application: PCT/JP2010/001879 WO 20100316
- International Announcement: WO2010/113399 WO 20101007
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
Public/Granted literature
- US20110101372A1 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME Public/Granted day:2011-05-05
Information query
IPC分类:
