A semiconductor device, including: a semiconductor layer having an active region; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width smaller than the first width; an interlayer dielectric formed above the semiconductor layer; an electrode pad formed above the interlayer dielectric and covering the active region when viewed from a top side; and a forbidden region provided in the semiconductor layer in a specific range positioned outward from a line extending vertically downward from an edge of at least part of the electrode pad. A connection section at which the first conductive layer and the second conductive layer are connected is not provided in the forbidden region.