Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13412245Application Date: 2012-03-05
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Publication No.: US08441129B2Publication Date: 2013-05-14
- Inventor: Ki Young Kim
- Applicant: Ki Young Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0044099 20110511
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device includes a first structural body having first electrode pads; a second structural body disposed in a face-up type over the first structural body in such a way as to expose the first electrode pads, and having first connection members with at least two protrusions; and a third structural body disposed in a face-down type over the second structural body, and having second connection members with at least two protrusions, on a surface thereof facing the second structural body, wherein some of the protrusions of the second connection members are electrically connected with the exposed first electrode pads, and at least one of remaining protrusions of the second connection members is electrically connected with the first connection members.
Public/Granted literature
- US20120286426A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-11-15
Information query
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