Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13563650Application Date: 2012-07-31
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Publication No.: US08441135B2Publication Date: 2013-05-14
- Inventor: Hideyuki Yoko , Kayoko Shibata
- Applicant: Hideyuki Yoko , Kayoko Shibata
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-235490 20091009
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a first semiconductor chip that includes a driver circuit, a second semiconductor chip that includes a receiver circuit and an external terminal, and a plurality of through silicon vias that connect the first semiconductor chip and the second semiconductor chip. The first semiconductor chip further includes an output switching circuit that selectively connects the driver circuit to any one of the through silicon vias, the second semiconductor chip further includes an input switching circuit that selectively connects the receiver circuit to any one of the through silicon vias and the external terminal, the input switching circuit includes tri-state inverters each inserted between the receiver circuit and an associated one of the through silicon vias and the external terminal, and the input switching circuit activates any one of the tri-state inverters.
Public/Granted literature
- US20120305917A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-12-06
Information query
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