Invention Grant
- Patent Title: Semiconductor device with improved pixel arrangement
- Patent Title (中): 具有改进的像素布置的半导体器件
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Application No.: US11545910Application Date: 2006-10-11
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Publication No.: US08441185B2Publication Date: 2013-05-14
- Inventor: Hideaki Kuwabara , Hideto Ohnuma
- Applicant: Hideaki Kuwabara , Hideto Ohnuma
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2005-302315 20051017
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/06

Abstract:
As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
Public/Granted literature
- US20070085475A1 Semiconductor device and manufacturing method thereof Public/Granted day:2007-04-19
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