Invention Grant
- Patent Title: PMOS resistor
- Patent Title (中): PMOS电阻
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Application No.: US13332578Application Date: 2011-12-21
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Publication No.: US08441297B2Publication Date: 2013-05-14
- Inventor: Seunghyun Jang , Jae Ho Jung
- Applicant: Seunghyun Jang , Jae Ho Jung
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0131455 20101221
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
Provided is a PMOS resistor. The PMOS resistor includes a PMOS transistor pair, a switching unit, and a negative feedback unit. The PMOS transistor pair is symmetrically connected between first and second nodes. The switching unit compares a voltage of the first node and a voltage of the second node to output one of the voltages of the first and second nodes. The negative feedback unit receives an output of the switching unit to control a current which flows in the PMOS transistor pair, for maintaining a constant resistance value.
Public/Granted literature
- US20120154029A1 PMOS RESISTOR Public/Granted day:2012-06-21
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