Invention Grant
- Patent Title: Electrostatic switch for high frequency and method for manufacturing the same
- Patent Title (中): 高频静电开关及其制造方法
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Application No.: US12958827Application Date: 2010-12-02
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Publication No.: US08441328B2Publication Date: 2013-05-14
- Inventor: Kwang-Jae Shin
- Applicant: Kwang-Jae Shin
- Applicant Address: KR Yongin
- Assignee: Mems Solution Inc.
- Current Assignee: Mems Solution Inc.
- Current Assignee Address: KR Yongin
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: KR10-2009-0119350 20091203
- Main IPC: H01P1/10
- IPC: H01P1/10

Abstract:
An electrostatic switch for high frequency and a method for manufacturing the same are disclosed. The electrostatic switch for high frequency in accordance with an embodiment includes: a first substrate module including a first substrate, an electrode part and a pair of CoPlanar Waveguides (CPWs), the electrode part being installed on the first substrate, the pair of CPWs being formed on either side of the electrode part and guiding an RF signal to travel; and a second substrate module being joined to the first substrate module, the second substrate module including a membrane and a bias line, the membrane being installed on a second substrate and bent by bias voltage supplied to the electrode part and being coupled to the pair of CPWs across an upper area of the electrode part in order to be short-circuited to the electrode part, the bias line being connected to the electrode part.
Public/Granted literature
- US20110133851A1 ELECTROSTATIC SWITCH FOR HIGH FREQUENCY AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-06-09
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