Invention Grant
- Patent Title: Method for detecting the diameter of a single crystal and single crystal pulling apparatus
- Patent Title (中): 用于检测单晶和单晶拉制装置的直径的方法
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Application No.: US12452492Application Date: 2008-07-30
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Publication No.: US08441623B2Publication Date: 2013-05-14
- Inventor: Takahiro Yanagimachi , Susumu Sonokawa
- Applicant: Takahiro Yanagimachi , Susumu Sonokawa
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-225679 20070831
- International Application: PCT/JP2008/002038 WO 20080730
- International Announcement: WO2009/028134 WO 20090305
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient α obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality.
Public/Granted literature
- US20100128253A1 METHOD FOR DETECTING THE DIAMETER OF A SINGLE CRYSTAL AND SINGLE CRYSTAL PULLING APPARATUS Public/Granted day:2010-05-27
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