Invention Grant
- Patent Title: Decoding circuit withstanding high voltage via low-voltage MOS transistor and the implementing method thereof
- Patent Title (中): 通过低压MOS晶体管解码电路耐高压及其实现方法
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Application No.: US13338343Application Date: 2011-12-28
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Publication No.: US08441887B2Publication Date: 2013-05-14
- Inventor: Nan Wang , Guoyou Feng
- Applicant: Nan Wang , Guoyou Feng
- Applicant Address: CN Shanghai
- Assignee: Shanghai Hua Hong Nec Electronics Company, Ltd.
- Current Assignee: Shanghai Hua Hong Nec Electronics Company, Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Sinorica, LLC
- Agent Ming Chow
- Priority: CN200810043652 20080721
- Main IPC: H03K19/08
- IPC: H03K19/08

Abstract:
A decoding circuit withstanding high voltage via a low-voltage MOS transistor, where negative high voltage that can be withstood can be as high as double what the transistor itself can withstand via two-stage CMOS inverters connected serially. When the negative high voltage is withstood, the source of a PMOS transistor in the CMOS inverter is switched to high resistance, and the substrate to the ground; the source of an NMOS transistor in the first CMOS inverter is connected with a half negative high voltage, and the source of an NMOS transistor in the second CMOS inverter with a negative high voltage; the first CMOS inverter, whose output is the half negative high voltage, is grounded at its input terminal, and output of the second CMOS inverter is the negative high voltage.
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