In one embodiment an example apparatus includes a memory with an error detection system (EDS) that detects an error event in the memory. The error event involves at least one bit in the memory changing state erroneously. The apparatus also includes a scrub logic to scrub the memory and correct memory errors (e.g., bit errors). The apparatus also includes a scrub rate adaptive logic to selectively control a memory scrub frequency associated with the scrub logic where the control is based, at least in part, on a number of error events detected by the EDS during an interval of time. A memory scrub frequency is the rate that a memory is periodically scrubbed to remove errors.