Invention Grant
- Patent Title: Doped hydrogen storage material
- Patent Title (中): 掺杂储氢材料
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Application No.: US13493354Application Date: 2012-06-11
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Publication No.: US08444876B2Publication Date: 2013-05-21
- Inventor: Alexandra Teodora Anghel , Brian Elliott Hayden , Duncan Clifford Smith , Jean-Philippe Soulie
- Applicant: Alexandra Teodora Anghel , Brian Elliott Hayden , Duncan Clifford Smith , Jean-Philippe Soulie
- Applicant Address: GB Southampton
- Assignee: Ilika Technologies Limited
- Current Assignee: Ilika Technologies Limited
- Current Assignee Address: GB Southampton
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: EP08101517 20080212
- Main IPC: C01B6/24
- IPC: C01B6/24

Abstract:
A doped hydrogen storage material according to the general formula: MgxByMzHn wherein: (i) the ratio of x/y is in the range of from 0.15 to 1.5; (ii) z is in the range of from 0.005 to 0.35; (iii) x+y+z equals 1; (iv) M=is one or more metals selected from the group of selected Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn; (v) n is no more than 4y; and wherein x/y does not equal 0.5 and at least part of the doped hydrogen storage material is amorphous. The doped hydrogen storage materials are used for storing hydrogen, and also disclosed is a method for reversibly desorbing and/or absorbing hydrogen.
Public/Granted literature
- US20120305839A1 DOPED HYDROGEN STORAGE MATERIAL Public/Granted day:2012-12-06
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