Invention Grant
US08445188B2 Process for formation of highly uniform arrays of nano-holes and nano-pillars
有权
用于形成高度均匀的纳米孔阵列和纳米柱的方法
- Patent Title: Process for formation of highly uniform arrays of nano-holes and nano-pillars
- Patent Title (中): 用于形成高度均匀的纳米孔阵列和纳米柱的方法
-
Application No.: US12584897Application Date: 2009-09-14
-
Publication No.: US08445188B2Publication Date: 2013-05-21
- Inventor: Hooman Mohseni
- Applicant: Hooman Mohseni
- Applicant Address: US VA Arlington
- Assignee: National Science Foundation
- Current Assignee: National Science Foundation
- Current Assignee Address: US VA Arlington
- Agency: Klintworth & Rozenblat IP LLC
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A photolithography method of patterning photoresist involves disposing a two-dimensional array of focusing particles of spherical or other shape on the photoresist and illuminating the particles on the photoresist to generate deep, sub-wavelength patterns on the photoresist. When developed, a positive photoresist layer generates a two-dimensional array of micro- or nano-holes on the developed photoresist. When developed, a negative photoresist layer generates a two-dimensional array of micro- or nano-pillars on the developed photoresist.
Public/Granted literature
- US20100080954A1 Process for formation of highly uniform arrays of nano-holes and nano-pillars Public/Granted day:2010-04-01
Information query
IPC分类: